发明名称 Magneto-resistive element for a magneto-resistive device and method of manufacturing thereof
摘要 A magnetoresistive element (MR element) for reading a change in a magnetic field of a magnetic recording medium includes first and second electrode layers for providing a sensing current, which are perpendicular to an air bearing surface (ABS) facing the magnetic recording medium, first and second free layers which have a magnetization direction which changes in accordance with an external magnetic field, and a spacer layer composed of non-magnetic material. A ratio of a representative width and a representative length of each of the first and second free layers is at least 2 to 1, to thereby provide initial magnetizations along a direction of the representative length of each of the first and second free layers.
申请公布号 US8310792(B2) 申请公布日期 2012.11.13
申请号 US20070984243 申请日期 2007.11.15
申请人 OHTA NAOKI;YAMAZAKI HIROSHI;TDK CORPORATION 发明人 OHTA NAOKI;YAMAZAKI HIROSHI
分类号 G11B5/33 主分类号 G11B5/33
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