发明名称 |
Semiconductor device with solder bump formed on high topography plated Cu pads |
摘要 |
A semiconductor device has a first conductive layer formed over a substrate. A first insulating layer is formed over the substrate and first conductive layer. A second conductive layer is formed over the first conductive layer and first insulating layer. A second insulating layer is formed over the first insulating layer and second conductive layer. The second insulating layer has a sidewall between a surface of the second insulating material and surface of the second conductive layer. A protective layer is formed over the second insulating layer and surface of the second conductive layer. The protective layer follows a contour of the surface and sidewall of the second insulating layer and second conductive layer. A bump is formed over the surface of the second conductive layer and a portion of the protective layer adjacent to the second insulating layer. The protective layer protects the second insulating layer.
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申请公布号 |
US8304904(B2) |
申请公布日期 |
2012.11.06 |
申请号 |
US20100700114 |
申请日期 |
2010.02.04 |
申请人 |
LIN YAOJIAN;ZHANG QING;CAO HAIJING;STATS CHIPPAC, LTD. |
发明人 |
LIN YAOJIAN;ZHANG QING;CAO HAIJING |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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