| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to prevent deformation of patterns by eliminating a sacrificing layer using dry cleaning after a wet cleaning process. CONSTITUTION: A hard mask pattern is formed on the top of a semiconductor substrate. A trench(121) is formed on the semiconductor substrate. A sacrificing layer(123) is formed on the bottom side of the trench. The wet cleaning process is performed after the sacrificing layer is formed. The sacrificing layer is removed by a drying method. An element isolation film is formed inside the trench.</p> |
