发明名称 |
SEMICONDUCTOR SUBSTRATE PROCESSING SYSTEM |
摘要 |
Apparatus for processing substrates are provided. In some embodiments, a processing system may include a first transfer chamber and a first process chamber coupled to the transfer chamber, the process chamber further comprising a substrate support to support a processing surface of a substrate within the process chamber, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector provides the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber. |
申请公布号 |
WO2012148801(A2) |
申请公布日期 |
2012.11.01 |
申请号 |
WO2012US34374 |
申请日期 |
2012.04.20 |
申请人 |
APPLIED MATERIALS, INC.;SANCHEZ, ERROL ANTONIO C.;CARLSON, DAVID K.;KUPPURAO, SATHEESH |
发明人 |
SANCHEZ, ERROL ANTONIO C.;CARLSON, DAVID K.;KUPPURAO, SATHEESH |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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