PROGRAMMING METHOD FOR NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for programming a nonvolatile memory device is provided to improve a memory cell program speed by performing a program operation using a target verification voltage as a pre-verification voltage of a target logic state. CONSTITUTION: A program voltage is applied to a selected memory cell. A pre-verification voltage(PVvfy) and a target verification voltage(TVvfy) are applied to the selected memory cell to verify a current logic state. If an interval between the target verification voltage of a first logic state and the target verification voltage of the second logic state is smaller than the interval between the target verification voltage of a third logic state and the target verification voltage of a fourth logic state, the target verification voltage of the first logic state is used as a pre-verification voltage for verifying the second logic state.