发明名称 METHOD FOR PREPARING II TO VI GROUP SEMICONDUCTOR COMPOUND QUANTUM DOT OR NANOPARTICLES THROUGH SONOCHEMICAL METHOD UNDER MULTI-BUBBLE SONOLUMINESCENCE CONDITIONS, AND METHOD FOR CONTROLLING SIZE OF THE QUANTUM DOT OR THE NANOPARTICLES
摘要 PURPOSE: A manufacturing method for II to VI group semiconductor quantum dots or nano particles through a sonochemical method under multi-bubble sonoluminescence conditions and a method for controlling size of the quantum dots or the nano particles are provided to control size of the quantum dots or the nano particles by controlling the sonoluminescence conditions or plastic conditions. CONSTITUTION: A mixture of II to VI group semiconductor precursors, a dispersant, and a surfactant are manufactured in a polar or nonpolar solvent. Semiconductor quantum dots are manufactured by processing the mixture with ultrasonic waves under a multi-bubble sonoluminescence condition. The II to VI group semiconductor precursors include Cd(cadmium)Cl2(chlorine gas) and Te(tellurium) or Se(selenium) powder.
申请公布号 KR20120117086(A) 申请公布日期 2012.10.24
申请号 KR20110034610 申请日期 2011.04.14
申请人 CHUNG-ANG UNIVERSITY INDUSTRY-ACADEMY COOPERATIONFOUNDATION 发明人 SHIM, IL WUN;PARK, JONG PIL;HWANG, CHA HWAN;SONG, MI YOUN
分类号 H01L21/20 主分类号 H01L21/20
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