| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a residue of a chlorine atom and an oxygen atom in a metal nitride film to improve the oxidation resistance of the metal nitride film in the temperature range that does not deteriorate the property of other films adjacent to the metal nitride film. <P>SOLUTION: A method for manufacturing a semiconductor device includes: a step of carrying a substrate, in which a natural oxide film is formed and a titanium nitride film containing a chlorine atom is formed, to a processing room and supporting it by a substrate support part; a step of heating the substrate by the substrate support part; a step of supplying nitrogen atom-containing gas and hydrogen atom-containing gas to the processing room by a gas supply part and exhausting them from the processing room by a gas exhaust part; and a step of exciting the nitrogen atom-containing gas and the hydrogen atom-containing gas supplied to the processing room by a plasma generation part. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2012193457(A) |
申请公布日期 |
2012.10.11 |
| 申请号 |
JP20120136588 |
申请日期 |
2012.06.18 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
HORIE TADASHI;HIRANO AKITO;TERASAKI TADASHI |
| 分类号 |
C23C16/56;H01L21/28;H01L21/3205;H01L21/768;H01L21/8242;H01L23/522;H01L27/108 |
主分类号 |
C23C16/56 |
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