发明名称 SEMICONDUCTOR DEVICE
摘要 A distance a from a first gate electrode of a first transistor of a high-frequency circuit to a first contact is greater than a distance b from a second electrode of a second transistor of a digital circuit to a second contact. The first contact is connected to a drain or source of the first transistor, and the second contact is connected to a drain or source of the second transistor.
申请公布号 US2012248543(A1) 申请公布日期 2012.10.04
申请号 US201213493579 申请日期 2012.06.11
申请人 KURAMOTO TAKAFUMI;NAKASHIBA YASUTAKA;RENESAS ELECTRONICS CORPORATION 发明人 KURAMOTO TAKAFUMI;NAKASHIBA YASUTAKA
分类号 H01L27/088 主分类号 H01L27/088
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