发明名称 PHASE DEFECT CORRECTION METHOD OF REFLECTION TYPE PHOTOMASK AND REFLECTION TYPE PHOTOMASK USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a phase defect correction method of reflection type mask which allows for accurate phase defect correction of a reflection type mask without causing any damage thereon. <P>SOLUTION: In the phase defect correction method of reflection type mask, phase difference between a phase defect part and a high reflection part is practically brought to 0 (zero) by laminating a multilayer film composed of two kinds of material on the phase defect part, and the reflectance of the phase defect part is substantially equalized to the reflectance of the high reflection part. Phase defect can be corrected by laminating a multilayer film for correction, even for a protrusion defect directly above a substrate and a protrusion defect in the center of the multilayer film. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012190964(A) 申请公布日期 2012.10.04
申请号 JP20110052595 申请日期 2011.03.10
申请人 TOPPAN PRINTING CO LTD 发明人 MATSUO TADASHI
分类号 H01L21/027;G03F1/22 主分类号 H01L21/027
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