发明名称 |
DRAM WITH SCHOTTKY BARRIER FET AND MIM TRENCH CAPACITOR |
摘要 |
A semiconductor circuit and method of fabrication is disclosed. In one embodiment, the semiconductor circuit comprises a metal-insulator-metal trench capacitor in a silicon substrate. A field effect transistor is disposed on the silicon substrate adjacent to the metal-insulator-metal trench capacitor, and a silicide region is disposed between the field effect transistor and the metal-insulator-metal trench capacitor. Electrical connectivity between the transistor and capacitor is achieved without the need for a buried strap. |
申请公布号 |
US2012248522(A1) |
申请公布日期 |
2012.10.04 |
申请号 |
US201113073103 |
申请日期 |
2011.03.28 |
申请人 |
GOYAL PUNEET;HO HERBERT LEI;JANA PRADEEP;LIU JIN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GOYAL PUNEET;HO HERBERT LEI;JANA PRADEEP;LIU JIN |
分类号 |
H01L29/772;H01L21/02 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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