Method for forming germanium oxide film and material for electronic device

摘要

A method for forming a germanium oxide film between a germanium substrate and an insulating film includes producing atomic oxygen on a surface of the insulating film formed on a surface of the germanium substrate by generating a plasma of a processing gas containing oxygen atom-containing gas. The method further includes forming a germanium oxide film by reacting germanium with the atomic oxygen which has reached the germanium substrate after penetrating the insulating film by irradiating the plasma on the surface of the insulating film.