发明名称 VIAS BETWEEN CONDUCTIVE LAYERS TO IMPROVE RELIABILITY
摘要 <P>PROBLEM TO BE SOLVED: To provide techniques for improving reliability of vias. <P>SOLUTION: Another semiconductor device includes a first layer (21) including a plurality of electrically conductive wires (12-20), and a second layer (33); and a plurality of non-functional via pads (34) are included in the second layer or between the first layer and the second layer. A plurality of dangling vias (40) are included within a specified area of the first layer. The dangling vias connect one or more of the wires in the first layer to a respective one of the via pads. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012182455(A) 申请公布日期 2012.09.20
申请号 JP20120040338 申请日期 2012.02.27
申请人 FREESCALE SEMICONDUCTOR INC 发明人 TUAN S HOANG;PUNITO SHARMA
分类号 H01L21/82;H01L21/3205;H01L21/768;H01L21/822;H01L23/522;H01L27/04 主分类号 H01L21/82
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