发明名称 |
VIAS BETWEEN CONDUCTIVE LAYERS TO IMPROVE RELIABILITY |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide techniques for improving reliability of vias. <P>SOLUTION: Another semiconductor device includes a first layer (21) including a plurality of electrically conductive wires (12-20), and a second layer (33); and a plurality of non-functional via pads (34) are included in the second layer or between the first layer and the second layer. A plurality of dangling vias (40) are included within a specified area of the first layer. The dangling vias connect one or more of the wires in the first layer to a respective one of the via pads. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012182455(A) |
申请公布日期 |
2012.09.20 |
申请号 |
JP20120040338 |
申请日期 |
2012.02.27 |
申请人 |
FREESCALE SEMICONDUCTOR INC |
发明人 |
TUAN S HOANG;PUNITO SHARMA |
分类号 |
H01L21/82;H01L21/3205;H01L21/768;H01L21/822;H01L23/522;H01L27/04 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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