SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode (16), an n-side electrode (17), and an inorganic film (30). The semiconductor layer includes a first surface having an unevenness (15a), a second surface opposite to the first surface, and a light emitting layer(13). The semiconductor layer includes gallium nitride. The p-side electrode (16) is provided on the second surface in a region including the light emitting layer (13). The n-side electrode (17) is provided on the second surface in a region not including the light emitting layer. The inorganic film is provided to conform to the unevenness of the first surface and in contact with the first surface. The inorganic film has main components of silicon and nitrogen. The inorganic film has a refractive index between a refractive index of the gallium nitride and a refractive index of air. An unevenness is formed also in a surface of the inorganic film.