发明名称 |
HYBRID MOSFET STRUCTURE HAVING DRAIN SIDE SCHOTTKY JUNCTION |
摘要 |
A method of forming a transistor device includes forming a patterned gate structure over a semiconductor substrate, forming a raised source region over the semiconductor substrate adjacent a source side of the gate structure, and forming silicide contacts on the raised source region, on the patterned gate structure, and on the semiconductor substrate adjacent a drain side of the gate structure. Thereby, a hybrid field effect transistor (FET) structure having a drain side Schottky contact and a raised source side ohmic contact is defined.
|
申请公布号 |
US2012235239(A1) |
申请公布日期 |
2012.09.20 |
申请号 |
US201113049491 |
申请日期 |
2011.03.16 |
申请人 |
CHENG KANGGUO;KHAKIFIROOZ ALI;KULKARNI PRANITA;SHAHIDI GHAVAM G.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;KHAKIFIROOZ ALI;KULKARNI PRANITA;SHAHIDI GHAVAM G. |
分类号 |
H01L27/12;H01L21/336;H01L29/78 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|