发明名称 |
Edge emitting semiconductor laser having a phase structure |
摘要 |
An edge emitting semiconductor laser includes a semiconductor body, which has a waveguide region. The waveguide region has an active layer for generating laser radiation. The active layer is arranged between a first waveguide layer and a second waveguide layer. The waveguide region is arranged between a first cladding layer and a second cladding layer. The semiconductor body has a main region and at least one phase structure region in which is formed a phase structure for the selection of lateral modes of the laser radiation emitted by the active layer. The phase structure region is arranged outside the waveguide region or formed by a region in which a dopant is introduced or an intermixing structure is produced. |
申请公布号 |
US8270451(B2) |
申请公布日期 |
2012.09.18 |
申请号 |
US20100956558 |
申请日期 |
2010.11.30 |
申请人 |
SCHMID WOLFGANG;ZEITNER UWE D.;ECKSTEIN HANS-CHRISTOPH;OSRAM OPTO SEMICONDUCTORS GMBH;FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E. V. |
发明人 |
SCHMID WOLFGANG;ZEITNER UWE D.;ECKSTEIN HANS-CHRISTOPH |
分类号 |
H01S3/08 |
主分类号 |
H01S3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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