发明名称 SUBSTRATE PROCESSING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing device which activates a large amount of processing gas and supplies the gas without deactivating the gas. <P>SOLUTION: A substrate processing device includes: a substrate support body 3 supporting a substrate W, a catalyst plate 5, a first processing gas supply part 70a supplying a first processing gas activated through contact with the catalyst plate 5, and an induction heating coil 6 inductively heating the catalyst plate 5. The substrate support body 3 is disposed on one surface of the catalyst plate 5, and the induction heating coil 6 is disposed on the other surface of the catalyst plate 5. The catalyst plate 5 divides a processing chamber 1 into a first space on the induction heating coil 6 side and a second space on the substrate support body 3 side. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012169553(A) 申请公布日期 2012.09.06
申请号 JP20110031214 申请日期 2011.02.16
申请人 TOKYO ELECTRON LTD 发明人 YUASA MITSUHIRO
分类号 H01L21/205;C23C16/44;C23C16/452;C23C16/455;H01L51/50;H05B33/04;H05B33/10 主分类号 H01L21/205
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