METHOD OF PRODUCING GaN SELF-STANDING SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of producing a GaN self-standing substrate of high quality at high yield by peeling off a thick GaN film during growing.

SOLUTION: The method of producing the GaN self-standing substrate sequentially includes: a step of forming a ZnO film on a sapphire substrate; a low-temperature growing step of forming a GaN film on the ZnO film at 850°C so as not to peeled off; and a step of high-temperature growing step of additionally forming the GaN film by raising the temperature to the level of 950°C or more, and of peeling the GaN film off the substrate, thereby obtaining the GaN self-standing substrate.

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