发明名称 |
High-efficiency GaN-based ultraviolet light-emitting diode |
摘要 |
A high-efficiency light emitting diode is provided. The light emitting diode includes a substrate; a first compound semiconductor layer formed on the top surface of the substrate; a first electrode formed on a region of the first compound semiconductor layer; an active layer formed on a region of the first compound semiconductor layer excluding the region with the first electrode layer, in which 430-nm or less wavelength light is generated; a second compound semiconductor layer formed on the active layer; and a second electrode formed on the second compound semiconductor layer, with a filling ratio of 20-80% with respect to the area of the top surface of the substrate. The light emission of a 430-nm or less light emitting diode can be enhanced by adjusting the size of the p-type second electrode within the range of 20-80%. |
申请公布号 |
EP1396892(B1) |
申请公布日期 |
2012.08.29 |
申请号 |
EP20030252996 |
申请日期 |
2003.05.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, JAE-HEE;OH, HYE-JEONG |
分类号 |
H01L33/38;H01L33/06;H01L33/32;H01L33/42 |
主分类号 |
H01L33/38 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|