SINGLE CRYSTAL GROWTH APPARATUS USING MICROWAVES AND GROWTH METHOD THEREOF

摘要

One embodiment of a single crystal growth apparatus of the present invention comprises: a growth furnace constituting an insulating felt thereinside; a crucible which is provided inside the insulating felt and contains raw materials for single crystals, wherein seed crystals are positioned in the crucible; a main heating unit which is configured at the outer side of the crucible and provides heat to the crucible; an auxiliary heating unit which is provided in the growth furnace and heats the heating unit and the raw materials for single crystals within the crucible by microwaves; a heat exchange unit which is configured at the lower part of the crucible and carries out heat exchange with the crucible; and a cooling unit which includes a cooling chamber provided on the outer wall of the growth furnace and provides refrigerants to the cooling chamber.