发明名称 HEMT/GaN half-bridge circuit
摘要 A half-bridge circuit in accordance with an embodiment of the present application includes an input voltage terminal operable to receive an input voltage, a first bi-directional switch, a second bi-directional switch connected in series with the first bi-directional switch, wherein the first and second bi-directional switches are connected to the input voltage terminal such that the input voltage is provided across the first and second bi-directional switches and a controller operable to turn the first and second bi-directional switches ON and OFF such that a desired voltage is provided at an midpoint node positioned between the first bi-directional switch and the second bi-directional switch. The first bi-directional switch and the second bi-directional switch are high electron mobility transistors structured to allow for conduction in two directions when ON and to prevent conduction in any direction when OFF.
申请公布号 US8243476(B2) 申请公布日期 2012.08.14
申请号 US201113108259 申请日期 2011.05.16
申请人 RIBARICH THOMAS;INTERNATIONAL RECTIFIER CORPORATION 发明人 RIBARICH THOMAS
分类号 H02M3/335 主分类号 H02M3/335
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