| 发明名称 |
ISOLATION FOR NANOWIRE DEVICES |
| 摘要 |
<p>The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present disclosure relates to forming an isolated nanowire, wherein isolation structure adjacent the nanowire provides a substantially level surface for the formation of microelectronic structures thereon.</p> |
| 申请公布号 |
KR20120087999(A) |
申请公布日期 |
2012.08.07 |
| 申请号 |
KR20127016670 |
申请日期 |
2010.11.03 |
| 申请人 |
INTEL CORPORATION |
发明人 |
SHAH UDAY;CHU KUNG BENJAMIN;JIN BEEN YIH;PILLARISETTY RAVI;RADOSAVLJEVIC MARKO;RACHMADY WILLY |
| 分类号 |
H01L29/78;H01L21/336;H01L21/76 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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