发明名称 |
SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer. |
申请公布号 |
US2012195339(A1) |
申请公布日期 |
2012.08.02 |
申请号 |
US201213359494 |
申请日期 |
2012.01.26 |
申请人 |
NISHIOKA YOSHITO;MUGINO YOICHI;NOMA TSUGUKI;ROHM CO., LTD. |
发明人 |
NISHIOKA YOSHITO;MUGINO YOICHI;NOMA TSUGUKI |
分类号 |
H01S5/02;H01L21/18 |
主分类号 |
H01S5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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