| 摘要 |
<p>An inertial micro-electromechanical sensor and a manufacturing method thereof are disclosed. The manufacturing method includes: providing a semiconductor substrate (100), forming an interlayer dielectric layer on the semiconductor substrate (100), forming a cavity (135) in the interlayer dielectric layer, forming a fixing member and a driving electrode electrically insulated with the fixing member in the interlayer dielectric layer outside the cavity (135), and forming a mass block in the cavity (135). The mass block is electrically connected with the fixing member, and can perform movement relative to the driving electrode. The sensor and the manufacturing method thereof combine the micro-electromechanical sensor and the CMOS process, improve the quality and the inertia of the mass block of the micro-electromechanical sensor, and improve noise interference preventing capability of the micro-electromechanical sensor.</p> |
