发明名称 |
REDUCTION OF ETCHING CHARGE DAMAGE IN MANUFACTURE OF MICROELECTROMECHANICAL DEVICES |
摘要 |
A method of manufacturing a microelectromechanical device includes forming at least two conductive layers on a substrate. An isolation layer is formed between the two conductive layers. The conductive layers are electrically coupled together and then the isolation layer is removed to form a gap between the conductive layers. The electrical coupling of the layers mitigates or eliminates the effects of electrostatic charge build up on the device during the removal process. |
申请公布号 |
KR101162192(B1) |
申请公布日期 |
2012.07.05 |
申请号 |
KR20067023026 |
申请日期 |
2005.04.20 |
申请人 |
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发明人 |
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分类号 |
B81C1/00;B81B3/00;B81B7/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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