发明名称 REDUCTION OF ETCHING CHARGE DAMAGE IN MANUFACTURE OF MICROELECTROMECHANICAL DEVICES
摘要 A method of manufacturing a microelectromechanical device includes forming at least two conductive layers on a substrate. An isolation layer is formed between the two conductive layers. The conductive layers are electrically coupled together and then the isolation layer is removed to form a gap between the conductive layers. The electrical coupling of the layers mitigates or eliminates the effects of electrostatic charge build up on the device during the removal process.
申请公布号 KR101162192(B1) 申请公布日期 2012.07.05
申请号 KR20067023026 申请日期 2005.04.20
申请人 发明人
分类号 B81C1/00;B81B3/00;B81B7/00 主分类号 B81C1/00
代理机构 代理人
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