| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrochemical etching method for a semiconductor by which the semiconductor is improved in adhesion with metal. <P>SOLUTION: In the method, (a) there is provided a semiconductor wafer having front and rear faces which have oxide emitter layers, and having a p-n junction; (b) the semiconductor wafer is brought into contact with a composition containing one and more bifluoride sources, one and more fluoride salts, or a mixture of these sources and salts, and one and more metal ion sources; (c) an electric current is generated in the composition; (d) a cycle in which an anode current is applied for a predetermined time and then the anode current is shut off for a predetermined time, and repeated until nano-pores are formed in the oxide emitter layers of the semiconductor wafer; and (e) a cathode current and light are applied to deposit metal on the nano-pore layers. <P>COPYRIGHT: (C)2012,JPO&INPIT |
