SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a metal gate from deteriorating by forming an intermediate layer between the metal gates. CONSTITUTION: An NMOS(N-Channel Metal Oxide Semiconductor) transistor(Tr1) is formed on an NMOS transistor region(101). A PMOS(P-Channel Metal Oxide Semiconductor) transistor(Tr2) is formed on a PMOS transistor region(102). The NMOS transistor includes an NMOS gate(G1) and a first gate insulating layer(23A). A spacer(28A) is arranged on a sidewall of the NMOS gate. The PMOS transistor includes a PMOS gate(G2) and a second gate insulating layer(23B). A spacer(28B) is arranged on the sidewall of the PMOS gate.