TRANSISTOR AND SEMICONDUCTOR DEVICE HAVING TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A transistor is provided. The transistor includes: a substrate(100) at least having a base layer(101), a first semiconductor layer(103), an insulating layer(104) and a second semiconductor layer(105) stacked sequentially; a gate stack layer(111) formed on the second semiconductor layer(105); a source region(112) and a drain region(113) located on both sides of the gate stack layer(111) respectively; a back gate(120) having a back gate dielectric and a back gate electrode formed of the insulating layer(104) and the first semiconductor layer(103) respectively; and a back gate contact(121) formed on a portion of the back gate electrode. The back gate contact(121) includes an extension portion projecting from the surface of the back gate electrode, and each of the source region(112) and the drain region(113) includes an extension portion projecting from the surface of the second semiconductor layer(105).