NITRIDE BASED SEMICONDUCTOR DEVICE

摘要

PURPOSE: A nitride type semiconductor device is provided to decentralize an electric field focused in a schottky electrode unit when executing counter direction movement by inserting an ohmic contact inside the schottky electrode unit. CONSTITUTION: An electrode structure(130) comprises a first ohmic electrode(133), a second ohmic electrode(134), and a schottky electrode unit(136). The first ohmic electrode accomplishes ohmic contact with a semiconductor film. The second ohmic electrode is separated from the first ohmic electrode. The schottky electrode unit accomplishes schottky contact with the semiconductor film. The schottky electrode unit covers the second ohmic electrode. The schottky electrode unit comprises an extension unit which is extended to be contiguous to the first ohmic electrode.