| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing method which allows for suppression or reduction of foreign matters attributed to an altered layer on the inner wall of a processing chamber or the Y<SB POS="POST">2</SB>O<SB POS="POST">3</SB>surface of a part in the processing chamber. <P>SOLUTION: The plasma processing method uses a plasma processing device where the material composing the inner wall surface of a processing chamber or the material of a part in the processing chamber consists of yttria. The plasma processing method includes a step for placing a specimen in the processing chamber and etching the specimen, a deposit removal step for removing the deposits deposited in the processing chamber during the etching step by plasma using a gas containing fluorine or chlorine, and a step for exposing the interior of the processing chamber to plasma of a noble gas after the deposit removal step. <P>COPYRIGHT: (C)2012,JPO&INPIT |
