SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device is characterized in that it has a first semiconductor layer that is formed on a substrate, a second semiconductor layer that is formed on the first semiconductor layer, a source electrode and a drain electrode that are formed in contact with the first semiconductor layer or the second semiconductor layer, an open portion that is formed on the first semiconductor layer, an insulation film that is formed over the second semiconductor layer and on the inner surface of the open portion, a gate electrode that is formed in the open portion over the insulation film, and a protective film that is formed on the insulation film, wherein the protective film includes an amorphous film adopting carbon as a main component.