| 摘要 |
A semiconductor structure and a process thereof are provided. The semiconductor structure includes a semiconductor wafer having a first surface and a second surface opposite to the first surface, through silicon vias and a crack stopping slot. The through silicon vias are embedded in the semiconductor wafer and connected between the first surface and the second surface. The crack stopping slot is located in the periphery of the second surface of the semiconductor wafer. The depth of the crack stopping slot is less than or equal to the thickness of the semiconductor wafer. The process firstly provides a semiconductor wafer having through silicon vias. Then, the aforementioned crack stopping slot is formed at a back side of the semiconductor wafer opposite to the first surface. Next, the semiconductor wafer is thinned from the back side to expose a second end of each through silicon via. |
