发明名称 |
Crystal Growth Atmosphere For Oxyorthosilicate Materials Production |
摘要 |
A method of growing a rare-earth oxyorthosilicate crystal, and crystals grown using the method are disclosed. The method includes preparing a melt by melting a first substance including at least one first rare-earth element and providing an atmosphere that includes an inert gas and a gas including oxygen.
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申请公布号 |
US2012126171(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US20100953582 |
申请日期 |
2010.11.24 |
申请人 |
ANDREACO MARK S.;SZUPRYCZYNSKI PIOTR;CAREY A. ANDREW;SIEMENS MEDICAL SOLUTIONS USA, INC. |
发明人 |
ANDREACO MARK S.;SZUPRYCZYNSKI PIOTR;CAREY A. ANDREW |
分类号 |
C09K11/79;C30B15/04 |
主分类号 |
C09K11/79 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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