发明名称 |
SILICON CARBIDE SUBSTRATE FABRICATION METHOD, SEMICONDUCTOR DEVICE FABRICATION METHOD, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE |
摘要 |
A method of fabricating a silicon carbide substrate that can reduce the fabrication cost of a semiconductor device employing the silicon carbide substrate includes the steps of: preparing a SiC substrate made of single crystal silicon carbide; arranging a base substrate in a vessel so as to face one main face of the SiC substrate; forming a base layer made of silicon carbide so as to contact one main face of the SiC substrate by heating a base substrate to a temperature range greater than or equal to a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming a base layer, a silicon generation source made of a substance including silicon is arranged in the vessel, in addition to the SiC substrate and the base substrate.
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申请公布号 |
US2012112209(A1) |
申请公布日期 |
2012.05.10 |
申请号 |
US201113382374 |
申请日期 |
2011.02.25 |
申请人 |
NISHIGUCHI TARO;HARADA SHIN;INOUE HIROKI;SASAKI MAKOTO;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NISHIGUCHI TARO;HARADA SHIN;INOUE HIROKI;SASAKI MAKOTO |
分类号 |
H01L29/24;H01L21/20;H01L21/30 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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