发明名称 Integrating three-dimensional high capacitance density structures
摘要 Disclosed are three-dimensional dielectric structures on high surface area electrodes and fabrication methods. Exemplary structures comprise a copper foil substrate, trench electrodes or high surface area porous electrode structures formed on the substrate, a insulating thin film formed on the surface and laminating the foil on a organic substrate. A variety of materials may be used to make the films including perovksite ceramics such as barium titanate, strontium titanate, barium strontium titanate (BST), lead zirconate titanate (PZT); other intermediate dielectric constant films such as zinc oxide, aluminum nitride, silicon nitride; typical paraelectrics such as tantalum oxide, alumina, and titania. The films may be fabricated using sol-gel, hydrothermal synthesis, anodization or vapor deposition techniques.
申请公布号 US8174017(B2) 申请公布日期 2012.05.08
申请号 US20060505201 申请日期 2006.08.16
申请人 PULUGURTHA MARKONDEYA RAJ;BALARAMAN DEVARAJAN;ABOTHU ISAAC R.;TUMMALA RAO;AYAZI FARROKH;GEORGIA TECH RESEARCH CORPORATION 发明人 PULUGURTHA MARKONDEYA RAJ;BALARAMAN DEVARAJAN;ABOTHU ISAAC R.;TUMMALA RAO;AYAZI FARROKH
分类号 H01L27/108 主分类号 H01L27/108
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