| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming device and a method therefor capable of stable film formation and capable of forming a homogeneous film of high quality on a substrate having grooves and pores of submicrons in particular. SOLUTION: A plasma beam PB from a plasma gun 30 arrives at a hearth 51. A hearth liner 53a on the upper part of the hearth 51 and a sintered body 53b are heated by the plasma beam PB, the evaporated metal contained in the sintered body 53b is melted to ooze out to the surface, and the vapor of the metal is stably emitted from the sintered body 53b. This vapor is ionized by the plasma beam PB and deposits on the surface of a substrate WA applied with negative voltage to form a coating film. Since the stable vapor is emitted from the surface of the sintered body 53b at this time, even in the case grooves or holes of a high aspect ratio are formed on the substrate WA, the metal can easily be buried therein, and the formation of a wiring film is made easy.
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