| 摘要 |
<p>A method for depositing at least one thin-film electrode (402, 403) onto a transparent conductive oxide film (405) is provided. At first, the transparent conductive oxide film (405) is deposited onto a substrate (101) to be processed. Then, the substrate (101) and the transparent conductive oxide film (405) are subjected to a processing environment containing a processing gas (207) acting as a donor material or an acceptor material with respect to the transparent conductive oxide film (405). The at least one thin-film electrode (402, 403) is deposited onto at least portions of the transparent conductive oxide film (405). A partial pressure of the processing gas (207) acting as the donor material or the acceptor material with respect to the transparent conductive oxide film (405) is varied while depositing the at least one thin-film electrode (402, 403) onto at least portions of the transparent conductive oxide film (405). Thus, a modified transparent conductive oxide film (410) having reduced interface resistance (408) and bulk resistance (409') can be obtained.</p> |
