发明名称 Zero Temperature Coefficient Capacitor
摘要 A zero temperature coefficient (ZTC) capacitor including a silicon dioxide dielectric layer with a phosphorus density between 1.7×1020 atoms/cm3 and 2.3×1020 atoms/cm3. An integrated circuit containing a ZTC capacitor including a silicon dioxide dielectric layer with a phosphorus density between 1.7×1020 atoms/cm3 and 2.3×1020 atoms/cm3. A process of forming an integrated circuit containing a ZTC capacitor including a silicon dioxide dielectric layer with a phosphorus density between 1.7×1020 atoms/cm3 and 2.3×1020 atoms/cm3.
申请公布号 US2012098045(A1) 申请公布日期 2012.04.26
申请号 US201113267674 申请日期 2011.10.06
申请人 TIAN WEIDONG;KHAN IMRAN;TEXAS INSTRUMENTS INCORPORATED 发明人 TIAN WEIDONG;KHAN IMRAN
分类号 H01L29/772;H01L21/336;H01L29/92 主分类号 H01L29/772
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