| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transistor including a dielectric of praseodymium oxide and praseodymium oxide, and a method of manufacturing the same and therefore, to solve problems of the leak current of a semiconductor device and an excessively large thickness of an equivalent oxide film. <P>SOLUTION: The transistor having praseodymium oxide includes at least, a group III-V substrate, a gate dielectric layer, and a gate electrode. The group III-V substrate further includes a gate dielectric layer, and a gate electrode provided on the gate dielectric layer. The dielectric layer is made of praseodymium oxide(Pr<SB POS="POST">x</SB>O<SB POS="POST">y</SB>). According to the invention, using the praseodymium oxide(Pr<SB POS="POST">6</SB>O<SB POS="POST">11</SB>) having a high permittivity and a high energy gap as the material of the dielectric layer allows the effective suppression of the leak current, and enables the decrease in the equivalent oxide film thickness (EOT) of a device having a substrate of group III-V material. <P>COPYRIGHT: (C)2012,JPO&INPIT |
