发明名称 |
MEMORY CELLS, MEMORY CELL PROGRAMMING METHODS, MEMORY CELL READING METHODS, MEMORY CELL OPERATING METHODS, AND MEMORY DEVICES |
摘要 |
The disclosure includes a memory device comprises a first bitline, a second bitline, and a memory element disposed to be selectively and reversibly configured in one of two different resistive states. A first diode is connected between the first bitline and a first electrode of the memory element. A second diode is connected between the second bitline and the first electrode of the memory element. A wordline is connected to a second electrode of the memory element. The disclosure also includes a method of pogramming a memory cell and a cell reading method. |
申请公布号 |
KR101136639(B1) |
申请公布日期 |
2012.04.18 |
申请号 |
KR20107015584 |
申请日期 |
2008.11.21 |
申请人 |
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发明人 |
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分类号 |
G11C16/34;G11C13/02;G11C16/08;G11C16/24 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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