发明名称 |
MICROELECTRONIC STRUCTURES INCLUDING CUPROUS OXIDE SEMICONDUCTORS AND HAVING IMPROVED P-N HETEROJUNCTIONS |
摘要 |
The present invention provides strategies for making higher quality p-n heterojunctions that incorporate cuprous oxide and another material suitable for forming the heterojunction. When incorporated into microelectronic devices, these improved heterojunctions would be expected to provide improved microelectronic properties such as improved defect density, in particular lower interfacial defect density at the p-n heterojunction, leading to improved microelectronic devices such as solar cell devices with improved open circuit voltage, fill factor, efficiency, current density, and the like. |
申请公布号 |
WO2012044729(A2) |
申请公布日期 |
2012.04.05 |
申请号 |
WO2011US53814 |
申请日期 |
2011.09.29 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY;DARVISH, DAVIS S.;ATWATER, HARRY A. |
发明人 |
DARVISH, DAVIS S.;ATWATER, HARRY A. |
分类号 |
H01L31/032 |
主分类号 |
H01L31/032 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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