| 摘要 |
A method of measuring a resistance of a memory cell in a resistive memory device can be provided by applying a data write pulse to a selected cell of the resistive memory device, applying a resistance read pulse to the selected cell after a delay time measured from a time of applying the data write pulse, measuring a drop voltage at the cell responsive to a pulse waveform output when applying the resistance read pulse to the selected cell, measuring a total current through the cell using the drop voltage and an internal resistance of a test device coupled to the cell, and determining a resistance of the resistive memory device using the total current and a voltage of the resistance read pulse. |
