SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a substrate processing apparatus which improve a deposition rate and film thickness uniformity of a thin film formed on a substrate by enhancing supply of material gasses to the substrate.

SOLUTION: The semiconductor manufacturing method comprises: a step of depositing a thin film of a predetermined film thickness on a substrate by performing one or more cycles each including a step of supplying a material gas into a processing chamber in which the substrate is stored and exhausting the material gas through an exhaust duct, and a step of supplying a reaction gas different from the material gas into the processing chamber and exhausting the reaction gas through the exhaust duct. In the step of supplying the material gas, a valve provided on the exhaust duct is temporarily closed fully to temporarily block the exhaust duct immediately before supplying the material gas.

COPYRIGHT: (C)2012,JPO&INPIT