| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high luminance and a manufacturing method of the same. <P>SOLUTION: The semiconductor light-emitting element according to an embodiment comprises a structure, a first electrode layer and a second electrode layer. The structure includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a luminescent layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first openings and second openings. The first electrode layer is provided on the second semiconductor layer on the side opposite to the first semiconductor layer. The metal portion has a thickness ranging from 10 nanometers to 200 nanometers. The plurality of first openings have circle equivalent diameters ranging from 10 nanometers to 1 micrometer. The second openings have circle equivalent diameters ranging from more than 1 micrometer to 30 micrometers. The first electrode layer is in electrical conduction with the second semiconductor layer and the second electrode layer is in electrical conduction with the first semiconductor layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
