| 摘要 |
<p>1314041 Gas/solid contact; decomposition of gases INTERNATIONAL BUSINESS MACHINES CORP 28 April 1970 [19 May 1969 (2)] 20216/70 Heading B1F [Also in Divisions C7 and H1] In a gas buffer, 1, Fig. 2, between two treatment chambers containing gases Al and A2 for treating a moving semiconductor work piece 4, a non-adversely reacting buffer gas A3 is introduced through pipe 11, and a mixture of gases A1 and A3 is drawn off through pipe 12, and a mixture of gases A2 and A3 is drawn off through pipe 13. Mixing of gases A1 and A2 is thus substantially prevented. The workpiece may be a filament or a semiconductor plate. Fig. 5 shows means for moving semiconductors 64 in carriers 50 through treatment chambers, and Fig. 7 shows a suitable carrier. In Fig. 8, silicon wafers are sequentially processed in chambers 69A, 69B, 69C in successive dry (69A), wet (69B) and dry (69C) oxidation conditions to provide stratified oxide layers, using chambers 69, 92 and 72 as buffer chambers and oxygen, nitrogen, helium or argon as the buffer gas. Other processes described are processing surface preconditioned silicon wafers in an atmosphere of hydrogen, silicon tetrachloride and oxygen for silicon oxide deposition; diffusing phosphorus pentoxide as a conductivity determining impurity from a co-formed film matrix thereof with silicon oxide on a wafer; and a sequential vapour etching and deposition of consecutive superposed layers of epitaxial, nitride (or silicon oxide) and metal films on semi-conductor substrates.</p> |
