| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can form a thick silicide layer while inhibiting occurrence of short circuits between gate electrodes and a semiconductor substrate caused by silicide layer growth. <P>SOLUTION: The semiconductor manufacturing method comprises the steps of forming gate electrodes 51, 52 on a side face of a pillar 26 via a gate insulator 27, forming an upper impurity diffusion region 36 on a top edge of the pillar 26, forming a cylinder hole 71 penetrating interlayer insulators 39, 68 formed on the upper impurity diffusion region 36 and exposing a top face of the upper impurity diffusion region 36, forming a silicon film 42 at the bottom part of the cylinder hole 71 to cover the top face of the upper impurity diffusion region 36 and fill a part of the cylinder hole 71, and forming a lower electrode 57 so as to cover a top face of the silicon film 42 and an inner surface of the cylinder hole 71 above the silicon film 42 while forming a silicide layer 43 by reacting Si contained in the silicon film 42 with a metal contained in the lower electrode 57 by use of heat generated in forming the lower electrode 57. <P>COPYRIGHT: (C)2012,JPO&INPIT |
