POWER MOSFET WITH EMBEDDED RECESSED FIELD PLATE AND METHODS OF FABRICATION
摘要
Semiconductor power devices, and related methods, wherein a recessed contact makes lateral ohmic contact to the source diffusion, but is insulated from the underlying recessed field plate (RFP). Such an insulated RFP is here referred to as an embedded recessed field plate (ERFP).
申请公布号
WO2011133481(A3)
申请公布日期
2012.02.23
申请号
WO2011US32939
申请日期
2011.04.19
申请人
MAXPOWER SEMICONDUCTOR INC.;DARWISH, MOHAMED, N.;ZENG, JUN;SU, SHIH-TZUNG;BLANCHARD, RICHARD, A.
发明人
DARWISH, MOHAMED, N.;ZENG, JUN;SU, SHIH-TZUNG;BLANCHARD, RICHARD, A.