发明名称 EXPOSURE EQUIPMENT, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To resolve a fine pattern on a wafer. <P>SOLUTION: An illumination optical system IOP switches (or simultaneously) first and second lights of different wavelengths to irradiate a reticle R1 having a first pattern positioned on a first surface and a reticle R2 having a second pattern positioned on a second surface via a sub optical system 60 with the lights as an illumination light IL. An image of a composite pattern composed of a part where the first and second patterns are overlapped is formed on a wafer W held by a wafer stage WST on the image surface. Therefore, when first and second resist layers having sensitivity to the first and second lights are formed on an object, an image of a composite pattern composed of a part where the first and second patterns are overlapped is formed on the first and second resist layers by irradiating the reticles R1 and R2 respectively with the first and second lights simultaneously as an illumination light. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012033925(A) 申请公布日期 2012.02.16
申请号 JP20110151537 申请日期 2011.07.08
申请人 NIKON CORP 发明人 SHIBAZAKI YUICHI
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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