| 摘要 |
<P>PROBLEM TO BE SOLVED: To miniaturize a semiconductor device with an ohmic electrode formed on a via hole. <P>SOLUTION: A semiconductor device comprises: a substrate 10; a semiconductor layer 12 formed on the substrate 10; and an ohmic electrode 20 constituting a source electrode or a drain electrode, which is formed on a semiconductor layer 12. In the substrate 10 and the semiconductor layer 12, a via hole 30 penetrating the substrate 10 and the semiconductor layer 12 is formed. The via hole 30 includes a first via hole 32 at least penetrating the semiconductor layer, and a second via hole 34 that is formed in the substrate 10 under the first via hole 32 and that has a larger opening cross-sectional area than the second via hole 32. The ohmic electrode 20 is provided on the first via hole 32. <P>COPYRIGHT: (C)2012,JPO&INPIT |
