发明名称 |
METHOD FOR PRODUCING A CHALCOGENIDE-SEMICONDUCTOR LAYER OF THE ABC2 TYPE WITH OPTICAL PROCESS MONITORING |
摘要 |
<p>A method of monitoring the chalcogenation process in which the chalcogenide semiconductor layer is produced by initially sequentially depositing the two precursor layers of elements A and B and thereafter carrying out a chalcogenizing process with a simultaneous optical process control in which the layer sequence A B is irradiated by light from at least one coherent light source, the light diffusely scattered at the surface is detected and the scattered light signal measured as a function of time is evaluated such that characteristic changes in the layer developing during the chalcogenation are assigned to four characteristic points of the scattered light signal curve.</p> |
申请公布号 |
PT1380050(E) |
申请公布日期 |
2009.01.09 |
申请号 |
PT20020732388T |
申请日期 |
2002.04.04 |
申请人 |
HELMHOLTZ-ZENTRUM BERLIN FUER MATERIALIEN UND ENERGIE GMBH |
发明人 |
ROLAND SCHEER;CHRISTIAN PIETZKER |
分类号 |
H01L21/477;H01L21/66;C23C14/06;C23C16/52;C23C16/56;C30B25/10;G01R31/26;H01L21/00;H01L21/06;H01L21/16;H01L21/302;H01L21/461;H01L31/0296;H01L31/032;H01L31/18;H01L45/00 |
主分类号 |
H01L21/477 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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