发明名称 |
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method capable of exciting a uniform plasma on a large-area substrate. <P>SOLUTION: A plasma processing apparatus 10 has: a vacuum container 100 having therein a mounting table 115 for mounting a substrate G, and a plasma space in which a plasma is generated above the mounting table; a first coaxial tube 225 that supplies a high frequency wave for exciting the plasma in the vacuum container 100; a waveguide 205 connected with the first coaxial tube 225, and that opens in a slit shape toward the plasma space; and adjusting means that adjusts a wavelength of the high frequency wave propagating in the waveguide 205 in a longitudinal direction of the slit-like opening. By setting the wavelength of the high frequency wave propagating in the waveguide 205 to be sufficiently long by the adjusting means, a uniform high frequency electric field can be applied to the slit-like opening along the longitudinal direction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012022916(A) |
申请公布日期 |
2012.02.02 |
申请号 |
JP20100160449 |
申请日期 |
2010.07.15 |
申请人 |
TOHOKU UNIV;TOKYO ELECTRON LTD |
发明人 |
HIRAYAMA MASAKI;OMI TADAHIRO |
分类号 |
H05H1/46;C23C16/509;H01L21/3065;H05H1/00 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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